Electrostatic spin control in InAs/InP nanowire quantum dots.
Identifieur interne : 000E24 ( Main/Exploration ); précédent : 000E23; suivant : 000E25Electrostatic spin control in InAs/InP nanowire quantum dots.
Auteurs : RBID : pubmed:22849393English descriptors
- KwdEn :
- Arsenicals (chemistry), Crystallization (methods), Electroplating (methods), Indium (chemistry), Macromolecular Substances (chemistry), Materials Testing, Molecular Conformation, Nanostructures (chemistry), Nanostructures (ultrastructure), Particle Size, Phosphines (chemistry), Quantum Dots, Surface Properties.
- MESH :
- chemical , chemistry : Arsenicals, Indium, Macromolecular Substances, Phosphines.
- chemistry : Nanostructures.
- methods : Crystallization, Electroplating.
- ultrastructure : Nanostructures.
- Materials Testing, Molecular Conformation, Particle Size, Quantum Dots, Surface Properties.
Abstract
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K.
DOI: 10.1021/nl301497j
PubMed: 22849393
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Silvestro 12, I-56127 Pisa</wicri:regionArea></affiliation></author><author><name sortKey="Roddaro, Stefano" uniqKey="Roddaro S">Stefano Roddaro</name></author><author><name sortKey="Pitanti, Alessandro" uniqKey="Pitanti A">Alessandro Pitanti</name></author><author><name sortKey="Ercolani, Daniele" uniqKey="Ercolani D">Daniele Ercolani</name></author><author><name sortKey="Sorba, Lucia" uniqKey="Sorba L">Lucia Sorba</name></author><author><name sortKey="Beltram, Fabio" uniqKey="Beltram F">Fabio Beltram</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1021/nl301497j</idno><idno type="RBID">pubmed:22849393</idno><idno type="pmid">22849393</idno><idno type="wicri:Area/Main/Corpus">000B47</idno><idno type="wicri:Area/Main/Curation">000B47</idno><idno type="wicri:Area/Main/Exploration">000E24</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Crystallization (methods)</term><term>Electroplating (methods)</term><term>Indium (chemistry)</term><term>Macromolecular Substances (chemistry)</term><term>Materials Testing</term><term>Molecular Conformation</term><term>Nanostructures (chemistry)</term><term>Nanostructures (ultrastructure)</term><term>Particle Size</term><term>Phosphines (chemistry)</term><term>Quantum Dots</term><term>Surface Properties</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Indium</term><term>Macromolecular Substances</term><term>Phosphines</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term><term>Electroplating</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Materials Testing</term><term>Molecular Conformation</term><term>Particle Size</term><term>Quantum Dots</term><term>Surface Properties</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22849393</PMID><DateCreated><Year>2012</Year><Month>09</Month><Day>12</Day></DateCreated><DateCompleted><Year>2013</Year><Month>01</Month><Day>28</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1530-6992</ISSN><JournalIssue CitedMedium="Internet"><Volume>12</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Sep</Month><Day>12</Day></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>Electrostatic spin control in InAs/InP nanowire quantum dots.</ArticleTitle><Pagination><MedlinePgn>4490-4</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nl301497j</ELocationID><Abstract><AbstractText>Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport measurements in this regime allow us to demonstrate the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. The strong confinement of the present devices leads to a large energy gain for the observed anomalous spin configurations that exceeds 4 meV. As a consequence, this behavior is well visible even at temperatures exceeding T = 20 K.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Romeo</LastName><ForeName>Lorenzo</ForeName><Initials>L</Initials><Affiliation>NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy.</Affiliation></Author><Author ValidYN="Y"><LastName>Roddaro</LastName><ForeName>Stefano</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Pitanti</LastName><ForeName>Alessandro</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Ercolani</LastName><ForeName>Daniele</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Sorba</LastName><ForeName>Lucia</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Beltram</LastName><ForeName>Fabio</ForeName><Initials>F</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>08</Month><Day>06</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Macromolecular Substances</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electroplating</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Macromolecular Substances</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Molecular Conformation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanostructures</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="Y">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Quantum Dots</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Properties</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>8</Month><Day>6</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>8</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>8</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>1</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nl301497j</ArticleId><ArticleId IdType="pubmed">22849393</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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